Escola Técnica Superior de Enxeñaría
Facultad
A.
Asenov
Publicacións nas que colabora con A. Asenov (28)
2011
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Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851
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Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors
IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2209-2217
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The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2010
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A detailed 3D-NEGF simulation study of tunnelling in n-Si nanowire MOSFETs
2010 Silicon Nanoelectronics Workshop, SNW 2010
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Dopants and roughness induced resonances in thin Si nanowire transistors: A self-consistent NEGF-poisson study
Journal of Physics: Conference Series
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Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study
IEEE Transactions on Electron Devices, Vol. 57, Núm. 7, pp. 1626-1635
2009
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3-D nonequilibrium green's function simulation of nonperturbative scattering from discrete dopants in the source and drain of a silicon nanowire transistor
IEEE Transactions on Nanotechnology, Vol. 8, Núm. 5, pp. 603-610
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3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Comparison of density gradient and NEGF for 3D simulation of a nanowire MOSFET
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: A fully 3-D NEGF simulation study
IEEE Transactions on Electron Devices, Vol. 56, Núm. 7, pp. 1388-1395
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Efficient 3D drift-diffusion simulations of implant free heterostructure devices
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Impact of intrinsic parameter fluctuations on the performance of In 0.75Ga0.25As implant free MOSFETs
Semiconductor Science and Technology, Vol. 24, Núm. 5
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Investigation of resistance in n-doped Si wires using NEGF formalism
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Mesh generation for the "atomistic" simulation of variability in InGaAs implant-free NanoMOSFETs
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Perturbative vs non-perturbative impurity scattering in a narrow Si nanowire GAA transistor: A NEGF study
Journal of Physics: Conference Series
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Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green's function techniques
Journal of Computational Electronics, Vol. 8, Núm. 3-4, pp. 349-373
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Study of surface roughness in extremely small Si nanowire MOSFETs using fully-3D NEGFs
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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3D NEGF simulation of 'ab initio' scattering from discrete dopants in the source and drain of a nanowire transistor
IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
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Advanced simulation of statistical variability and reliability in nano CMOS transistors
Technical Digest - International Electron Devices Meeting, IEDM