Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors

  1. Martinez, A.
  2. Aldegunde, M.
  3. Seoane, N.
  4. Brown, A.R.
  5. Barker, J.R.
  6. Asenov, A.
Revista:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Ano de publicación: 2011

Volume: 58

Número: 8

Páxinas: 2209-2217

Tipo: Revisión

DOI: 10.1109/TED.2011.2157929 GOOGLE SCHOLAR
Fonte de datos: Scopus