A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET

  1. Martinez, A.
  2. Brown, A.R.
  3. Asenov, A.
  4. Seoane, N.
Actas:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9781424439492

Ano de publicación: 2009

Tipo: Achega congreso

DOI: 10.1109/SISPAD.2009.5290218 GOOGLE SCHOLAR
Fonte de datos: Scopus