Perturbative vs non-perturbative impurity scattering in a narrow Si nanowire GAA transistor: A NEGF study

  1. Martinez, A.
  2. Brown, A.R.
  3. Seoane, N.
  4. Asenov, A.
Actas:
Journal of Physics: Conference Series

ISSN: 1742-6596 1742-6588

Ano de publicación: 2009

Volume: 193

Tipo: Achega congreso

DOI: 10.1088/1742-6596/193/1/012047 GOOGLE SCHOLAR