Publicaciones en las que colabora con ANTONIO JESUS GARCIA LOUREIRO (57)

2018

  1. Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

    Journal of Physics Condensed Matter, Vol. 30, Núm. 14

2017

  1. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

  2. Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations

    European Solid-State Device Research Conference

2016

  1. 3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 933-939

  3. Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216

  4. Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  5. Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

    Semiconductor Science and Technology, Vol. 31, Núm. 7

2015

  1. 3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections

    IEEE Transactions on Nanotechnology, Vol. 14, Núm. 1, pp. 93-100

  2. Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors

    18th International Workshop on Computational Electronics, IWCE 2015

  3. Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  4. Variability characterisation of nanoscale Si and InGaAs fin field-effect-transistors at subthreshold

    Journal of Low Power Electronics, Vol. 11, Núm. 2, pp. 256-262

2014

  1. 3D Finite Element Schrödinger equation corrected Monte Carlo simulations of nanoscale FinFETs

    2014 International Workshop on Computational Electronics, IWCE 2014

  2. 3D Monte Carlo study of scaled SOI FinFETs using 2D Schrödinger quantum corrections

    ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon

  3. MC/DD study of metal grain induced current variability in a nanoscale InGaAs FinFET

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  4. Quantum corrections based on the 2-D Schrödinger equation for 3-D finite element monte carlo simulations of nanoscaled finfets

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 423-429

  5. Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs finFET

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 466-472

  6. Scaling of metal gate workfunction variability in nanometer SOI-FinFETs

    ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon

  7. Statistical study of the influence of LER and MGG in SOI MOSFET

    Semiconductor Science and Technology, Vol. 29, Núm. 4

  8. Variability characterisation of nanoscale Si and InGaAs FinFETs at subthreshold

    2014 5th European Workshop on CMOS Variability, VARI 2014