3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs

  1. Elmessary, M.A.
  2. Nagy, D.
  3. Aldegunde, M.
  4. Garcia-Loureiro, A.J.
  5. Kalna, K.
Actas:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9781509008179

Ano de publicación: 2016

Páxinas: 229-232

Tipo: Achega congreso

DOI: 10.1109/SISPAD.2016.7605189 GOOGLE SCHOLAR
Fonte de datos: Scopus