Publicacións en colaboración con investigadores/as de Swansea University (56)

2018

  1. Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

    Journal of Physics Condensed Matter, Vol. 30, Núm. 14

  2. Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

    Solid-State Electronics, Vol. 142, pp. 31-35

2017

  1. Impact of phonon scattering in an Si GAA nanowire FET with a single donor in the channel

    Nanoelectronic Device Applications Handbook (CRC Press), pp. 717-726

  2. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

  3. Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations

    European Solid-State Device Research Conference

2016

  1. 3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 933-939

  3. Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216

  4. Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

    Journal of Computational Electronics, Vol. 15, Núm. 4, pp. 1130-1147

  5. Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  6. Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

    Semiconductor Science and Technology, Vol. 31, Núm. 7

2015

  1. 3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections

    IEEE Transactions on Nanotechnology, Vol. 14, Núm. 1, pp. 93-100

  2. Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

    Computer Physics Communications, Vol. 189, pp. 31-36

  3. Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts

    Journal of Physics: Conference Series

  4. Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors

    18th International Workshop on Computational Electronics, IWCE 2015

  5. Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  6. Study of local power dissipation in ultrascaled silicon nanowire FETs

    IEEE Electron Device Letters, Vol. 36, Núm. 1, pp. 2-4

  7. The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

    Journal of Physics: Conference Series

  8. Variability characterisation of nanoscale Si and InGaAs fin field-effect-transistors at subthreshold

    Journal of Low Power Electronics, Vol. 11, Núm. 2, pp. 256-262

2014

  1. 3D Finite Element Schrödinger equation corrected Monte Carlo simulations of nanoscale FinFETs

    2014 International Workshop on Computational Electronics, IWCE 2014