Arquitectura de Computadores
ARQCOMP
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Mansoura University
El Mansura, EgiptoPublicacións en colaboración con investigadores/as de Mansoura University (22)
2024
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Scaling Challenges of Nanosheet Field-Effect Transistors into Sub-2 nm Nodes
IEEE Journal of the Electron Devices Society, Vol. 12, pp. 479-485
2019
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Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs
IEEE Access, Vol. 7, pp. 12790-12797
2018
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FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability
IEEE Journal of the Electron Devices Society, Vol. 6, Núm. 1, pp. 332-340
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Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness
Journal of Physics Condensed Matter, Vol. 30, Núm. 14
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Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations
IEEE Journal of the Electron Devices Society, Vol. 6, pp. 601-610
2017
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Metal Grain Granularity Study on a Gate-All-Around Nanowire FET
IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 5263-5269
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Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
Solid-State Electronics, Vol. 128, pp. 17-24
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Study of Strained Effects in Nanoscale GAA Nanowire FETs Using 3D Monte Carlo Simulations
2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)
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Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations
European Solid-State Device Research Conference
2016
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3D MC Simulations of Strain, Channel Orientation, and Quantum Confinement Effects in Nanoscale Si SOI FinFETs
2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)
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3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 933-939
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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216
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Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
2015
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3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections
IEEE Transactions on Nanotechnology, Vol. 14, Núm. 1, pp. 93-100
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Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors
18th International Workshop on Computational Electronics, IWCE 2015
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Multi-Subband Interface Roughness Scattering using 3D Finite Element Monte Carlo with 2D Schodinger Equation for Simulations of sub-16nm FinFETs
2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)
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Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors
18th International Workshop on Computational Electronics, IWCE 2015
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Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2014
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3D Finite Element Schrödinger equation corrected Monte Carlo simulations of nanoscale FinFETs
2014 International Workshop on Computational Electronics, IWCE 2014