3D MC Simulations of Strain, Channel Orientation, and Quantum Confinement Effects in Nanoscale Si SOI FinFETs

  1. Elmessary, Muhammad A.
  2. Nagy, Daniel
  3. Aldegunde, Manuel
  4. Garcia-Loureiro, Antonio J.
  5. Kalna, Karol
Colección de libros:
2016 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)
  1. Bar, E (coord.)
  2. Lorenz, J (coord.)
  3. Pichler, P (coord.)

ISSN: 1946-1569

ISBN: 978-1-5090-0817-9

Ano de publicación: 2016

Páxinas: 229-232

Congreso: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Tipo: Achega congreso

GOOGLE SCHOLAR
Fonte de datos: WoS