Facultade de Bioloxía
Facultad
Swansea University
Swansea, Reino UnidoPublicacións en colaboración con investigadores/as de Swansea University (58)
2024
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One hundred priority questions for advancing seagrass conservation in Europe
Plants People Planet, Vol. 6, Núm. 3, pp. 587-603
2023
2018
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Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness
Journal of Physics Condensed Matter, Vol. 30, Núm. 14
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Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
Solid-State Electronics, Vol. 142, pp. 31-35
2017
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Impact of phonon scattering in an Si GAA nanowire FET with a single donor in the channel
Nanoelectronic Device Applications Handbook (CRC Press), pp. 717-726
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Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
Solid-State Electronics, Vol. 128, pp. 17-24
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Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations
European Solid-State Device Research Conference
2016
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3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 933-939
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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216
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Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
Journal of Computational Electronics, Vol. 15, Núm. 4, pp. 1130-1147
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Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
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Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes
Semiconductor Science and Technology, Vol. 31, Núm. 7
2015
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3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections
IEEE Transactions on Nanotechnology, Vol. 14, Núm. 1, pp. 93-100
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Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes
Computer Physics Communications, Vol. 189, pp. 31-36
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Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts
Journal of Physics: Conference Series
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Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors
18th International Workshop on Computational Electronics, IWCE 2015
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Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Study of local power dissipation in ultrascaled silicon nanowire FETs
IEEE Electron Device Letters, Vol. 36, Núm. 1, pp. 2-4
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The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model
Journal of Physics: Conference Series