Publicacións en colaboración con investigadores/as de University of Glasgow (43)

2023

  1. Preface

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2011

  1. Extending the language modeling framework for sentence retrieval to include local context

    Information Retrieval, Vol. 14, Núm. 4, pp. 355-389

  2. Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851

  3. Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2209-2217

  4. The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2010

  1. A detailed 3D-NEGF simulation study of tunnelling in n-Si nanowire MOSFETs

    2010 Silicon Nanoelectronics Workshop, SNW 2010

  2. Dopants and roughness induced resonances in thin Si nanowire transistors: A self-consistent NEGF-poisson study

    Journal of Physics: Conference Series

  3. Improving Sentence Retrieval with an Importance Prior

    SIGIR 2010: PROCEEDINGS OF THE 33RD ANNUAL INTERNATIONAL ACM SIGIR CONFERENCE ON RESEARCH DEVELOPMENT IN INFORMATION RETRIEVAL

  4. Improving sentence retrieval with an importance prior

    SIGIR 2010 Proceedings - 33rd Annual International ACM SIGIR Conference on Research and Development in Information Retrieval

  5. Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

    Computer Physics Communications, Vol. 181, Núm. 1, pp. 24-34

  6. Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 7, pp. 1626-1635