A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET

  1. Martinez, A.
  2. Brown, A. R.
  3. Asenov, A.
  4. Seoane, Natalia
Colección de libros:
2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES

ISSN: 1946-1569

ISBN: 978-1-4244-3948-5

Ano de publicación: 2009

Páxinas: 194-195

Congreso: International Conference on Simulation of Semiconductor Processes and Devices

Tipo: Achega congreso

GOOGLE SCHOLAR
Fonte de datos: WoS