Publicacións nas que colabora con ENRIQUE COMESAÑA FIGUEROA (16)

2024

  1. A new path towards ultra-high efficient laser power converters: Silicon carbide-based multijunction devices

    Results in Engineering, Vol. 21

2023

  1. A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET

    Solid-State Electronics, Vol. 199

  2. A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint

    PLoS ONE, Vol. 18, Núm. 7 JULY

  3. An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs

    Solid-State Electronics, Vol. 207

  4. Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  5. Photogeneration and Performance Optimization (PhPO): A New Algorithm to Improve the Performance of Vertical Epitaxial Hetero-Structure Architecture Laser Power Converters

    IEEE Access, Vol. 11, pp. 84371-84378

2022

  1. Laser Power Converter Architectures Based on 3C-SiC with Efficiencies >80%

    Solar RRL, Vol. 6, Núm. 8

  2. Pelgrom-Based Predictive Model to Estimate Metal Grain Granularity and Line Edge Roughness in Advanced Multigate MOSFETs

    IEEE Journal of the Electron Devices Society, Vol. 10, pp. 953-959

2021

  1. Impact of metal grain granularity on three gate-all-around advanced architectures

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Simulations of statistical variability in n-Type FinFET, nanowire, and nanosheet FETs

    IEEE Electron Device Letters, Vol. 42, Núm. 10, pp. 1416-1419

2015

  1. A tool to deploy nanodevice simulations on cloud

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

2014

  1. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    2014 International Workshop on Computational Electronics, IWCE 2014

  2. Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs finFET

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 466-472

2013

  1. Nanodevice simulations on CloudStack

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  2. Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53 Ga 0.47 As GAA MOSFET

    IEEE Electron Device Letters, Vol. 34, Núm. 2, pp. 205-207

2012

  1. 3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD