Escola Técnica Superior de Enxeñaría
Fakultät
ENRIQUE
COMESAÑA FIGUEROA
Profesor axudante doutor
Publikationen, an denen er mitarbeitet ENRIQUE COMESAÑA FIGUEROA (19)
2024
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A General Toolkit for Advanced Semiconductor Transistors: From Simulation to Machine Learning
IEEE Journal of the Electron Devices Society
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A new path towards ultra-high efficient laser power converters: Silicon carbide-based multijunction devices
Results in Engineering, Vol. 21
2023
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A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET
Solid-State Electronics, Vol. 199
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A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint
PLoS ONE, Vol. 18, Núm. 7 JULY
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An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs
Solid-State Electronics, Vol. 207
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Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability
Zenodo
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Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability
Zenodo
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Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Photogeneration and Performance Optimization (PhPO): A New Algorithm to Improve the Performance of Vertical Epitaxial Hetero-Structure Architecture Laser Power Converters
IEEE Access, Vol. 11, pp. 84371-84378
2022
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Laser Power Converter Architectures Based on 3C-SiC with Efficiencies >80%
Solar RRL, Vol. 6, Núm. 8
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Pelgrom-Based Predictive Model to Estimate Metal Grain Granularity and Line Edge Roughness in Advanced Multigate MOSFETs
IEEE Journal of the Electron Devices Society, Vol. 10, pp. 953-959
2021
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Impact of metal grain granularity on three gate-all-around advanced architectures
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Simulations of statistical variability in n-Type FinFET, nanowire, and nanosheet FETs
IEEE Electron Device Letters, Vol. 42, Núm. 10, pp. 1416-1419
2015
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A tool to deploy nanodevice simulations on cloud
Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015
2014
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Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET
2014 International Workshop on Computational Electronics, IWCE 2014
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Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs finFET
IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 466-472
2013
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Nanodevice simulations on CloudStack
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
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Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53 Ga 0.47 As GAA MOSFET
IEEE Electron Device Letters, Vol. 34, Núm. 2, pp. 205-207
2012
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3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD