GUILLERMO
INDALECIO FERNANDEZ
Researcher in the period 2017-2019
Publications by the researcher in collaboration with GUILLERMO INDALECIO FERNANDEZ (30)
2020
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Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes
IEEE Access, Vol. 8, pp. 53196-53202
2019
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A multi-method simulation toolbox to study performance and variability of nanowire FETs
Materials, Vol. 12, Núm. 15
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Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs
IEEE Access, Vol. 7, pp. 12790-12797
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Impact of gate edge roughness variability on FinFET and gate-all-around nanowire FET
IEEE Electron Device Letters, Vol. 40, Núm. 4, pp. 510-513
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Impact of threshold voltage extraction methods on semiconductor device variability
Solid-State Electronics, Vol. 159, pp. 165-170
2018
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Analysis of Fluctuation Sensitivity Map Algorithms Applied to a 10nm GAA NW FET
Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
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FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability
IEEE Journal of the Electron Devices Society, Vol. 6, Núm. 1, pp. 332-340
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FoMPy: A figure of merit extraction tool for semiconductor device simulations
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
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Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability
IEEE Transactions on Electron Devices, Vol. 65, Núm. 2, pp. 456-462
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MPI-Performance-Aware-Reallocation: method to optimize the mapping of processes applied to a cloud infrastructure
Computing, Vol. 100, Núm. 2, pp. 211-226
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Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations
IEEE Journal of the Electron Devices Society, Vol. 6, pp. 601-610
2017
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Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects
IEEE Transactions on Electron Devices, Vol. 64, Núm. 4, pp. 1695-1701
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Metal Grain Granularity Study on a Gate-All-Around Nanowire FET
IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 5263-5269
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Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
Solid-State Electronics, Vol. 128, pp. 17-24
2016
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Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216
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Impact of cross-section of 10.4 nm gate length Ino.53Gao.47As FinFETs on metal grain variability
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
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Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
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Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes
Semiconductor Science and Technology, Vol. 31, Núm. 7
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Study of Metal-Gate Work-Function Variation Using Voronoi Cells: Comparison of Rayleigh and Gamma Distributions
IEEE Transactions on Electron Devices, Vol. 63, Núm. 6, pp. 2625-2628
2015
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A flexible cluster system for the management of virtual clusters in the cloud
Proceedings - 2015 IEEE 17th International Conference on High Performance Computing and Communications, 2015 IEEE 7th International Symposium on Cyberspace Safety and Security and 2015 IEEE 12th International Conference on Embedded Software and Systems, HPCC-CSS-ICESS 2015