Publikationen, an denen er mitarbeitet NATALIA SEOANE IGLESIAS (28)

2020

  1. Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

    IEEE Access, Vol. 8, pp. 53196-53202

2019

  1. A multi-method simulation toolbox to study performance and variability of nanowire FETs

    Materials, Vol. 12, Núm. 15

  2. Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs

    IEEE Access, Vol. 7, pp. 12790-12797

  3. Impact of gate edge roughness variability on FinFET and gate-all-around nanowire FET

    IEEE Electron Device Letters, Vol. 40, Núm. 4, pp. 510-513

  4. Impact of threshold voltage extraction methods on semiconductor device variability

    Solid-State Electronics, Vol. 159, pp. 165-170

2018

  1. Analysis of Fluctuation Sensitivity Map Algorithms Applied to a 10nm GAA NW FET

    Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018

  2. FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability

    IEEE Journal of the Electron Devices Society, Vol. 6, Núm. 1, pp. 332-340

  3. FoMPy: A figure of merit extraction tool for semiconductor device simulations

    2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

  4. Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability

    IEEE Transactions on Electron Devices, Vol. 65, Núm. 2, pp. 456-462

  5. MPI-Performance-Aware-Reallocation: method to optimize the mapping of processes applied to a cloud infrastructure

    Computing, Vol. 100, Núm. 2, pp. 211-226

  6. Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations

    IEEE Journal of the Electron Devices Society, Vol. 6, pp. 601-610

2017

  1. Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 4, pp. 1695-1701

  2. Metal Grain Granularity Study on a Gate-All-Around Nanowire FET

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 5263-5269

  3. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

2016

  1. Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216

  2. Impact of cross-section of 10.4 nm gate length Ino.53Gao.47As FinFETs on metal grain variability

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  4. Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

    Semiconductor Science and Technology, Vol. 31, Núm. 7

  5. Study of Metal-Gate Work-Function Variation Using Voronoi Cells: Comparison of Rayleigh and Gamma Distributions

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 6, pp. 2625-2628

2015

  1. Implementation of numerical methods for nanoscaled semiconductor device simulation using OpenCL

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015