Publicacións nas que colabora con A. Asenov (19)

2011

  1. Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851

2009

  1. 3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Efficient 3D drift-diffusion simulations of implant free heterostructure devices

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Impact of intrinsic parameter fluctuations on the performance of In 0.75Ga0.25As implant free MOSFETs

    Semiconductor Science and Technology, Vol. 24, Núm. 5

  4. Mesh generation for the "atomistic" simulation of variability in InGaAs implant-free NanoMOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors

    Physical Review E - Statistical, Nonlinear, and Soft Matter Physics, Vol. 77, Núm. 5

  2. Benchmarking of scaled InGaAs implant-free NanoMOSFETs

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 9, pp. 2297-2306

  3. Random dopant related variability in the 30 nm gate length In0.75Ga0.25As implant free MOSFET

    Journal of Computational Electronics, Vol. 7, Núm. 3, pp. 159-163

2007

  1. 'Atomistic' mesh generation for the simulation of semiconductor devices

    2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

  2. Analysis of the impact of intrinsic parameter fluctuations in a 50 nm InP HEMT

    2007 Spanish Conference on Electron Devices, Proceedings

  3. Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator

    Solid-State Electronics, Vol. 51, Núm. 3, pp. 481-488

  4. Implementation of a quantum corrections in a 3D parallel drift-diffusion simulator

    2007 Spanish Conference on Electron Devices, Proceedings

  5. Mesh generation for "atomistic" simulation of nanometre scale MOSFETs

    2007 Spanish Conference on Electron Devices, Proceedings

2006

  1. Current variations in PHEMTS introduced by channel composition fluctuations

    Journal of Physics: Conference Series, Vol. 38, Núm. 1, pp. 212-215

  2. Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator

    Journal of Computational Electronics, Vol. 5, Núm. 4, pp. 385-388

  3. Study of fluctuations in advanced MOSFETs using a 3D finite element parallel simulator

    Journal of Computational Electronics, Vol. 5, Núm. 4, pp. 311-314

2005

  1. Efficient three-dimensional parallel simulations of PHEMTs

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 18, Núm. 5, pp. 327-340

  2. Intrinsic fluctuations induced by a high-κ gate dielectric in sub-100 nm Si MOSFETs

    AIP Conference Proceedings

2003

  1. 3D Parallel Simulations of Fluctuation Effects in pHEMTs

    Journal of Computational Electronics, Vol. 2, Núm. 2-4, pp. 369-373