MANUEL ALEJO
ALDEGUNDE VILLAR
Investigador en el periodo 1983-2023
GUILLERMO
INDALECIO FERNANDEZ
Investigador en el periodo 2017-2019
Publicaciones en las que colabora con GUILLERMO INDALECIO FERNANDEZ (13)
2017
-
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
Solid-State Electronics, Vol. 128, pp. 17-24
2016
-
Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216
-
Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016
-
Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes
Semiconductor Science and Technology, Vol. 31, Núm. 7
2015
-
Variability characterisation of nanoscale Si and InGaAs fin field-effect-transistors at subthreshold
Journal of Low Power Electronics, Vol. 11, Núm. 2, pp. 256-262
2014
-
Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs finFET
IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 466-472
-
Scaling of metal gate workfunction variability in nanometer SOI-FinFETs
ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon
-
Statistical study of the influence of LER and MGG in SOI MOSFET
Semiconductor Science and Technology, Vol. 29, Núm. 4
-
Variability characterisation of nanoscale Si and InGaAs FinFETs at subthreshold
2014 5th European Workshop on CMOS Variability, VARI 2014
2013
-
Study of statistical variability in nanoscale transistors introduced by LER, RDF and MGG
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
-
Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53 Ga 0.47 As GAA MOSFET
IEEE Electron Device Letters, Vol. 34, Núm. 2, pp. 205-207
2012
-
3D simulation study of work-function variability in a 25 nm metal-gate FinFET with curved geometry using voronoi grains
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
-
3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD