Publicacións en colaboración con investigadores/as de University of Warwick (15)

2018

  1. Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

    Solid-State Electronics, Vol. 142, pp. 31-35

2017

  1. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

2016

  1. 3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 933-939

  3. Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216

  4. Development of an exchange-correlation functional with uncertainty quantification capabilities for density functional theory

    Journal of Computational Physics, Vol. 311, pp. 173-195

  5. Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

    Journal of Computational Electronics, Vol. 15, Núm. 4, pp. 1130-1147

  6. Quantifying uncertainties in first-principles alloy thermodynamics using cluster expansions

    Journal of Computational Physics, Vol. 323, pp. 17-44

  7. Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

2015

  1. Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

    Computer Physics Communications, Vol. 189, pp. 31-36

  2. Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts

    Journal of Physics: Conference Series

  3. Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors

    18th International Workshop on Computational Electronics, IWCE 2015

  4. Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  5. The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

    Journal of Physics: Conference Series

  6. Variability characterisation of nanoscale Si and InGaAs fin field-effect-transistors at subthreshold

    Journal of Low Power Electronics, Vol. 11, Núm. 2, pp. 256-262