Publicacións nas que colabora con GUILLERMO INDALECIO FERNANDEZ (13)

2017

  1. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

2016

  1. Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216

  2. Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016

  3. Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

    Semiconductor Science and Technology, Vol. 31, Núm. 7

2015

  1. Variability characterisation of nanoscale Si and InGaAs fin field-effect-transistors at subthreshold

    Journal of Low Power Electronics, Vol. 11, Núm. 2, pp. 256-262

2014

  1. Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs finFET

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 466-472

  2. Scaling of metal gate workfunction variability in nanometer SOI-FinFETs

    ULIS 2014 - 2014 15th International Conference on Ultimate Integration on Silicon

  3. Statistical study of the influence of LER and MGG in SOI MOSFET

    Semiconductor Science and Technology, Vol. 29, Núm. 4

  4. Variability characterisation of nanoscale Si and InGaAs FinFETs at subthreshold

    2014 5th European Workshop on CMOS Variability, VARI 2014

2013

  1. Study of statistical variability in nanoscale transistors introduced by LER, RDF and MGG

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  2. Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53 Ga 0.47 As GAA MOSFET

    IEEE Electron Device Letters, Vol. 34, Núm. 2, pp. 205-207

2012

  1. 3D simulation study of work-function variability in a 25 nm metal-gate FinFET with curved geometry using voronoi grains

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. 3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD