Publicacións en colaboración con investigadores/as de University of Glasgow (46)

2023

  1. Preface

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2011

  1. Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851

  2. Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2209-2217

  3. The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2010

  1. A detailed 3D-NEGF simulation study of tunnelling in n-Si nanowire MOSFETs

    2010 Silicon Nanoelectronics Workshop, SNW 2010

  2. Dopants and roughness induced resonances in thin Si nanowire transistors: A self-consistent NEGF-poisson study

    Journal of Physics: Conference Series

  3. Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

    Computer Physics Communications, Vol. 181, Núm. 1, pp. 24-34

  4. Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 7, pp. 1626-1635

2009

  1. 3-D nonequilibrium green's function simulation of nonperturbative scattering from discrete dopants in the source and drain of a silicon nanowire transistor

    IEEE Transactions on Nanotechnology, Vol. 8, Núm. 5, pp. 603-610

  2. 3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. 3D parallel finite element Monte Carlo simulator with quantum corrections using density gradient approach

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  4. A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  5. A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET

    2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES

  6. Comparison of density gradient and NEGF for 3D simulation of a nanowire MOSFET

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  7. Current variability in Si nanowire MOSFETs due to random dopants in the source/drain regions: A fully 3-D NEGF simulation study

    IEEE Transactions on Electron Devices, Vol. 56, Núm. 7, pp. 1388-1395

  8. Efficient 3D drift-diffusion simulations of implant free heterostructure devices

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  9. Impact of intrinsic parameter fluctuations on the performance of In 0.75Ga0.25As implant free MOSFETs

    Semiconductor Science and Technology, Vol. 24, Núm. 5

  10. Investigation of resistance in n-doped Si wires using NEGF formalism

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  11. Mesh generation for the "atomistic" simulation of variability in InGaAs implant-free NanoMOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  12. Perturbative vs non-perturbative impurity scattering in a narrow Si nanowire GAA transistor: A NEGF study

    Journal of Physics: Conference Series