Publicacións en colaboración con investigadores/as de University of Glasgow (53)

2023

  1. Hierarchical simulation of nanosheet field effect transistor: NESS flow

    Solid-State Electronics, Vol. 199

  2. Preface

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2021

  1. Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell

    2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021)

  2. KMC-based POM flash cell optimization and time-dependent performance investigation

    Semiconductor Science and Technology, Vol. 36, Núm. 7

  3. Simulation and modeling of novel electronic device architectures with ness (Nano-electronic simulation software): A modular nano tcad simulation framework

    Micromachines, Vol. 12, Núm. 6

  4. TCAD Simulation of Novel Semiconductor Devices

    Proceedings of International Conference on ASIC

2020

  1. A combined first principles and kinetic monte carlo study of polyoxometalate based molecular memory devices

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Enhanced capabilities of the nano-electronic simulation software (NESS)

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2011

  1. Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851

  2. Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2209-2217

  3. The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2010

  1. A detailed 3D-NEGF simulation study of tunnelling in n-Si nanowire MOSFETs

    2010 Silicon Nanoelectronics Workshop, SNW 2010

  2. Dopants and roughness induced resonances in thin Si nanowire transistors: A self-consistent NEGF-poisson study

    Journal of Physics: Conference Series

  3. Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

    Computer Physics Communications, Vol. 181, Núm. 1, pp. 24-34

  4. Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study

    IEEE Transactions on Electron Devices, Vol. 57, Núm. 7, pp. 1626-1635

2009

  1. 3-D nonequilibrium green's function simulation of nonperturbative scattering from discrete dopants in the source and drain of a silicon nanowire transistor

    IEEE Transactions on Nanotechnology, Vol. 8, Núm. 5, pp. 603-610

  2. 3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. 3D parallel finite element Monte Carlo simulator with quantum corrections using density gradient approach

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  4. A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  5. A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET

    2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES