Publicacións nas que colabora con ANTONIO JESUS GARCIA LOUREIRO (92)

2024

  1. A new path towards ultra-high efficient laser power converters: Silicon carbide-based multijunction devices

    Results in Engineering, Vol. 21

2023

  1. A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET

    Solid-State Electronics, Vol. 199

  2. A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint

    PLoS ONE, Vol. 18, Núm. 7 JULY

  3. An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs

    Solid-State Electronics, Vol. 207

  4. Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  5. Photogeneration and Performance Optimization (PhPO): A New Algorithm to Improve the Performance of Vertical Epitaxial Hetero-Structure Architecture Laser Power Converters

    IEEE Access, Vol. 11, pp. 84371-84378

2022

  1. Band-gap material selection for remote high-power laser transmission

    Solar Energy Materials and Solar Cells, Vol. 235

  2. Dependence of the vertical-tunnel-junction GaAs solar cell on concentration and temperature

    IET Renewable Power Generation, Vol. 16, Núm. 8, pp. 1577-1588

  3. Laser Power Converter Architectures Based on 3C-SiC with Efficiencies >80%

    Solar RRL, Vol. 6, Núm. 8

  4. Multilevel 3-D Device Simulation Approach Applied to Deeply Scaled Nanowire Field Effect Transistors

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 9, pp. 5276-5282

  5. Parallel approach of Schrödinger-based quantum corrections for ultrascaled semiconductor devices

    Journal of Computational Electronics, Vol. 21, Núm. 1, pp. 10-20

  6. Pelgrom-Based Predictive Model to Estimate Metal Grain Granularity and Line Edge Roughness in Advanced Multigate MOSFETs

    IEEE Journal of the Electron Devices Society, Vol. 10, pp. 953-959

2021

  1. Does the Threshold Voltage Extraction Method Affect Device Variability?

    IEEE Journal of the Electron Devices Society, Vol. 9, pp. 469-475

  2. GaAs Vertical-Tunnel-Junction Converter for Ultra-High Laser Power Transfer

    IEEE Electron Device Letters, Vol. 42, Núm. 12, pp. 1882-1885

  3. Impact of metal grain granularity on three gate-all-around advanced architectures

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  4. Methodology for the Simulation of the Variability of MOSFETs with Polycrystalline High-k Dielectrics Using CAFM Input Data

    IEEE Access, Vol. 9, pp. 90568-90576

  5. Methodology for the simulation of the variability of MOSFETs with polycrystalline high-k dielectrics using CAFM input data

    IEEE Access

  6. Simulations of statistical variability in n-Type FinFET, nanowire, and nanosheet FETs

    IEEE Electron Device Letters, Vol. 42, Núm. 10, pp. 1416-1419

  7. Ultra-efficient intrinsic-vertical-tunnel-junction structures for next-generation concentrator solar cells

    Progress in Photovoltaics: Research and Applications, Vol. 29, Núm. 2, pp. 231-237

2020

  1. Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

    IEEE Access, Vol. 8, pp. 53196-53202