Publicacións (114)

2023

  1. A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET

    Solid-State Electronics, Vol. 199

2022

  1. Pelgrom-Based Predictive Model to Estimate Metal Grain Granularity and Line Edge Roughness in Advanced Multigate MOSFETs

    IEEE Journal of the Electron Devices Society, Vol. 10, pp. 953-959

  2. Parallel approach of Schrödinger-based quantum corrections for ultrascaled semiconductor devices

    Journal of Computational Electronics, Vol. 21, Núm. 1, pp. 10-20

  3. Multilevel 3-D Device Simulation Approach Applied to Deeply Scaled Nanowire Field Effect Transistors

    IEEE Transactions on Electron Devices, Vol. 69, Núm. 9, pp. 5276-5282

  4. Laser Power Converter Architectures Based on 3C-SiC with Efficiencies >80%

    Solar RRL, Vol. 6, Núm. 8

  5. Dependence of the vertical-tunnel-junction GaAs solar cell on concentration and temperature

    IET Renewable Power Generation, Vol. 16, Núm. 8, pp. 1577-1588

  6. Band-gap material selection for remote high-power laser transmission

    Solar Energy Materials and Solar Cells, Vol. 235

2021

  1. Impact of metal grain granularity on three gate-all-around advanced architectures

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Ultra-efficient intrinsic-vertical-tunnel-junction structures for next-generation concentrator solar cells

    Progress in Photovoltaics: Research and Applications, Vol. 29, Núm. 2, pp. 231-237

  3. Simulations of statistical variability in n-Type FinFET, nanowire, and nanosheet FETs

    IEEE Electron Device Letters, Vol. 42, Núm. 10, pp. 1416-1419

  4. Methodology for the simulation of the variability of MOSFETs with polycrystalline high-k dielectrics using CAFM input data

    IEEE Access

  5. Methodology for the Simulation of the Variability of MOSFETs with Polycrystalline High-k Dielectrics Using CAFM Input Data

    IEEE Access, Vol. 9, pp. 90568-90576

  6. GaAs Vertical-Tunnel-Junction Converter for Ultra-High Laser Power Transfer

    IEEE Electron Device Letters, Vol. 42, Núm. 12, pp. 1882-1885

  7. Does the Threshold Voltage Extraction Method Affect Device Variability?

    IEEE Journal of the Electron Devices Society, Vol. 9, pp. 469-475

2020

  1. Special issue: Nanowire field-effect transistor (FET)

    Materials

  2. Numerical optimisation and recombination effects on the vertical-tunnel-junction (VTJ) GaAs solar cell up to 10,000 suns

    Solar Energy, Vol. 203, pp. 136-144

  3. Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology Nodes

    IEEE Access, Vol. 8, pp. 53196-53202

2019

  1. Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs

    IEEE Access, Vol. 7, pp. 12790-12797

  2. Combined nanoscale KPFM characterization and device simulation for the evaluation of the MOSFET variability related to metal gate workfunction fluctuations

    Microelectronic Engineering, Vol. 216

  3. A multi-method simulation toolbox to study performance and variability of nanowire FETs

    Materials, Vol. 12, Núm. 15