Publicacións en colaboración con investigadores/as de University of Glasgow (30)

2016

  1. Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

    Journal of Computational Electronics, Vol. 15, Núm. 4, pp. 1130-1147

2015

  1. Study of local power dissipation in ultrascaled silicon nanowire FETs

    IEEE Electron Device Letters, Vol. 36, Núm. 1, pp. 2-4

2014

  1. Causal self-energies for NEGF modelling of quantum nanowires

    Journal of Physics: Conference Series

  2. Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulations

    European Solid-State Device Research Conference

  3. Impact of lateral doping profiles on ultra-scaled Trigate FinFETs

    2014 International Workshop on Computational Electronics, IWCE 2014

  4. Quantum transport of a nanowire field-effect transistor with complex phonon self-energy

    Journal of Applied Physics, Vol. 116, Núm. 8

2013

  1. Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor

    Journal of Applied Physics, Vol. 113, Núm. 1

2012

  1. Compliant energy and momentum conservation in NEGF simulation of electron-phonon scattering in semiconductor nano-wire transistors

    Journal of Physics: Conference Series

  2. Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors

    2012 15th International Workshop on Computational Electronics, IWCE 2012

  3. NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants

    Solid-State Electronics

  4. Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations

    IEEE Electron Device Letters, Vol. 33, Núm. 2, pp. 194-196

2011

  1. Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851

  2. Non-equilibrium Green's function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

    Journal of Applied Physics, Vol. 110, Núm. 9

  3. Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors

    IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2209-2217

  4. The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2010

  1. Channel length dependence of discrete dopant effects in narrow Si nanowire transistors: A full 3D NEGF study

    2010 14th International Workshop on Computational Electronics, IWCE 2010

  2. Impact of scattering on the performance of a Si GAA nanowire FETs: From diffusive to ballistic regime

    2010 14th International Workshop on Computational Electronics, IWCE 2010

  3. Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

    Computer Physics Communications, Vol. 181, Núm. 1, pp. 24-34

2009

  1. 3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. 3D parallel finite element Monte Carlo simulator with quantum corrections using density gradient approach

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09