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University of Glasgow
Glasgow, Reino UnidoPublicacións en colaboración con investigadores/as de University of Glasgow (32)
2019
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A palaeoecological approach to understanding the past and present of Sierra Nevada, a Southwestern European biodiversity hotspot
Global and Planetary Change, Vol. 175, pp. 238-250
2016
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Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
Journal of Computational Electronics, Vol. 15, Núm. 4, pp. 1130-1147
2015
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Study of local power dissipation in ultrascaled silicon nanowire FETs
IEEE Electron Device Letters, Vol. 36, Núm. 1, pp. 2-4
2014
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Causal self-energies for NEGF modelling of quantum nanowires
Journal of Physics: Conference Series
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Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulations
European Solid-State Device Research Conference
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Impact of lateral doping profiles on ultra-scaled Trigate FinFETs
2014 International Workshop on Computational Electronics, IWCE 2014
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Quantum transport of a nanowire field-effect transistor with complex phonon self-energy
Journal of Applied Physics, Vol. 116, Núm. 8
2013
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Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor
Journal of Applied Physics, Vol. 113, Núm. 1
2012
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Compliant energy and momentum conservation in NEGF simulation of electron-phonon scattering in semiconductor nano-wire transistors
Journal of Physics: Conference Series
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Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
2012 15th International Workshop on Computational Electronics, IWCE 2012
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NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants
Solid-State Electronics
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Study of discrete doping-induced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations
IEEE Electron Device Letters, Vol. 33, Núm. 2, pp. 194-196
2011
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Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851
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Non-equilibrium Green's function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors
Journal of Applied Physics, Vol. 110, Núm. 9
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Quantum-transport study on the impact of channel length and cross sections on variability induced by random discrete dopants in narrow gate-all-around silicon nanowire transistors
IEEE Transactions on Electron Devices, Vol. 58, Núm. 8, pp. 2209-2217
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The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2010
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Channel length dependence of discrete dopant effects in narrow Si nanowire transistors: A full 3D NEGF study
2010 14th International Workshop on Computational Electronics, IWCE 2010
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Impact of scattering on the performance of a Si GAA nanowire FETs: From diffusive to ballistic regime
2010 14th International Workshop on Computational Electronics, IWCE 2010
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Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes
Computer Physics Communications, Vol. 181, Núm. 1, pp. 24-34
2009
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3D drift-diffusion simulation with quantum-corrections of Tri-Gate MOSFETs
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09