Publicacións en colaboración con investigadores/as de Mansoura University (8)

2018

  1. FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability

    IEEE Journal of the Electron Devices Society, Vol. 6, Núm. 1, pp. 332-340

  2. Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

    Journal of Physics Condensed Matter, Vol. 30, Núm. 14

  3. Spatial Sensitivity of Silicon GAA Nanowire FETs under Line Edge Roughness Variations

    IEEE Journal of the Electron Devices Society, Vol. 6, pp. 601-610

2017

  1. Metal Grain Granularity Study on a Gate-All-Around Nanowire FET

    IEEE Transactions on Electron Devices, Vol. 64, Núm. 12, pp. 5263-5269

  2. Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

    Solid-State Electronics, Vol. 128, pp. 17-24

2016

  1. Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

    IEEE Transactions on Electron Devices, Vol. 63, Núm. 3, pp. 1209-1216

  2. Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

    2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2016