Publicacións en colaboración con investigadores/as de Swansea University (8)

2021

  1. Impact of metal grain granularity on three gate-all-around advanced architectures

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Simulations of statistical variability in n-Type FinFET, nanowire, and nanosheet FETs

    IEEE Electron Device Letters, Vol. 42, Núm. 10, pp. 1416-1419

2014

  1. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    2014 International Workshop on Computational Electronics, IWCE 2014

  2. Influence of textured interfaces in the performance of a-Si:H double-junction solar cell

    2014 International Workshop on Computational Electronics, IWCE 2014

  3. Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs finFET

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 466-472

2013

  1. Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO

    Computer Physics Communications, Vol. 184, Núm. 3, pp. 746-756

  2. Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53 Ga 0.47 As GAA MOSFET

    IEEE Electron Device Letters, Vol. 34, Núm. 2, pp. 205-207

2012

  1. 3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD