Departamento de Fisiología
Departamento
ENRIQUE
COMESAÑA FIGUEROA
Profesor ayudante doctor
Publicaciones en las que colabora con ENRIQUE COMESAÑA FIGUEROA (6)
2014
-
Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs finFET
IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 466-472
2013
-
Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO
Computer Physics Communications, Vol. 184, Núm. 3, pp. 746-756
-
Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53 Ga 0.47 As GAA MOSFET
IEEE Electron Device Letters, Vol. 34, Núm. 2, pp. 205-207
2012
-
3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2011
-
Simulation of electron transport in magnetic tunnel junctions using the drift-diffusion model
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
2009
-
Numerical simulation of a ferromagnetic spin-polarised diode
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09