2023

1. A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint

   PLoS ONE, Vol. 18, Núm. 7 JULY

2. An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs

   Solid-State Electronics, Vol. 207

3. Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability

   Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability

4. Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability

   Figures of merit that characterize silicon gate-all-around nanowire FETs affected by line edge roughness variability