Publicacións nas que colabora con ENRIQUE COMESAÑA FIGUEROA (6)

2014

  1. Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs finFET

    IEEE Transactions on Electron Devices, Vol. 61, Núm. 2, pp. 466-472

2013

  1. Simulation of the spin polarization and the charge transport in Zener tunnel junctions based on ferromagnetic GaAs and ZnO

    Computer Physics Communications, Vol. 184, Núm. 3, pp. 746-756

  2. Three-dimensional simulations of random dopant and metal-gate workfunction variability in an In0.53 Ga 0.47 As GAA MOSFET

    IEEE Electron Device Letters, Vol. 34, Núm. 2, pp. 205-207

2012

  1. 3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

2011

  1. Simulation of electron transport in magnetic tunnel junctions using the drift-diffusion model

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

2009

  1. Numerical simulation of a ferromagnetic spin-polarised diode

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09