Combined nanoscale KPFM characterization and device simulation for the evaluation of the MOSFET variability related to metal gate workfunction fluctuations

  1. Ruiz, A.
  2. Seoane, N.
  3. Claramunt, S.
  4. García-Loureiro, A.
  5. Porti, M.
  6. Nafria, M.
Journal:
Microelectronic Engineering

ISSN: 0167-9317

Year of publication: 2019

Volume: 216

Type: Article

DOI: 10.1016/J.MEE.2019.111048 GOOGLE SCHOLAR