Combined nanoscale KPFM characterization and device simulation for the evaluation of the MOSFET variability related to metal gate workfunction fluctuations
- Ruiz, A.
- Seoane, N.
- Claramunt, S.
- García-Loureiro, A.
- Porti, M.
- Nafria, M.
Zeitschrift:
Microelectronic Engineering
ISSN: 0167-9317
Datum der Publikation: 2019
Ausgabe: 216
Art: Artikel