Statistical study of the effect of interface charge fluctuations in HEMTs using a 3D simulator

  1. Seoane, N.
  2. García-Loureiro, A.J.
  3. Kalna, K.
  4. Asenov, A.
Journal:
Journal of Computational Electronics

ISSN: 1569-8025,  1572-8137

Year of publication: 2006

Volume: 5

Issue: 4

Pages: 385-388

Type: Article

DOI: 10.1007/S10825-006-0019-4 GOOGLE SCHOLAR
Data source: Scopus