Publicacións nas que colabora con R. Valin (20)

2015

  1. 3-D finite element monte carlo simulations of scaled Si SOI FinFET with different cross sections

    IEEE Transactions on Nanotechnology, Vol. 14, Núm. 1, pp. 93-100

2014

  1. Influence of textured interfaces in the performance of a-Si:H double-junction solar cell

    2014 International Workshop on Computational Electronics, IWCE 2014

2013

  1. Improving subthreshold MSB-EMC simulations by dynamic particle weighting

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  2. Nanodevice simulations on CloudStack

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  3. Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator

    International Journal of High Performance Computing Applications, Vol. 27, Núm. 4, pp. 483-492

  4. Simulation of a-Si:H dual junction solar cells

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2012

  1. 3D 'atomistic' simulations of dopant induced variability in nanoscale implant free In 0.75Ga 0.25As MOSFETs

    Solid-State Electronics, Vol. 69, pp. 43-49

  2. 3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs

    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

  3. Cloud computing for teaching and learning MPI with improved network communications

    CEUR Workshop Proceedings

  4. Performance of the CloudStack KVM pod primary storage under NFS version 3

    Proceedings of the 2012 10th IEEE International Symposium on Parallel and Distributed Processing with Applications, ISPA 2012

  5. Two-dimensional Monte Carlo simulation of DGSOI MOSFET misalignment

    IEEE Transactions on Electron Devices, Vol. 59, Núm. 6, pp. 1621-1628

2011

  1. An e-Science infrastructure for nanoeletronic simulations based on grid and cloud technologies

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  2. Implementation of the density gradient quantum corrections for 3-d simulations of multigate nanoscaled transistors

    IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 30, Núm. 6, pp. 841-851

  3. Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

    Solid-State Electronics, Vol. 65-66, Núm. 1, pp. 88-93

  4. Parallel performance of the PETSc Krylov methods applied to linear systems of 3D nanodevice simulators

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

2010

  1. Multi-Subband Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond

    2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

  2. Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI

    Solid-State Electronics, Vol. 54, Núm. 2, pp. 131-136

2009

  1. Quantum Monte Carlo simulation of ultra-short DGSOI devices: A multi-subband approach

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. The MOSFET virtual organisation: Grid computing for simulation in nanoelectronics

    e-Science 2009 - 5th IEEE International Conference on e-Science

  3. Using grid infrastructures for a stationary DGSOI Monte Carlo simulation

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09