Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
- Mohamed, A.H.
- Oxland, R.
- Aldegunde, M.
- Hepplestone, S.P.
- Sushko, P.V.
- Kalna, K.
Journal:
Solid-State Electronics
ISSN: 0038-1101
Year of publication: 2018
Volume: 142
Pages: 31-35
Type: Article