A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET

  1. Martinez, A.
  2. Brown, A. R.
  3. Asenov, A.
  4. Seoane, Natalia
Büchersammlung:
2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES

ISSN: 1946-1569

ISBN: 978-1-4244-3948-5

Datum der Publikation: 2009

Seiten: 194-195

Kongress: International Conference on Simulation of Semiconductor Processes and Devices

Art: Konferenz-Beitrag

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Fuente de los datos: WoS