FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability

  1. Nagy, D.
  2. Indalecio, G.
  3. Garcia-Loureiro, A.J.
  4. Elmessary, M.A.
  5. Kalna, K.
  6. Seoane, N.
Journal:
IEEE Journal of the Electron Devices Society

ISSN: 2168-6734

Year of publication: 2018

Volume: 6

Issue: 1

Pages: 332-340

Type: Article

DOI: 10.1109/JEDS.2018.2804383 GOOGLE SCHOLAR lock_openOpen access editor
Data source: Scopus