3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs

  1. Elmessary, M.A.
  2. Nagy, D.
  3. Aldegunde, M.
  4. Garcia-Loureiro, A.J.
  5. Kalna, K.
Proceedings:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9781509008179

Year of publication: 2016

Pages: 229-232

Type: Conference paper

DOI: 10.1109/SISPAD.2016.7605189 GOOGLE SCHOLAR
Data source: Scopus