Variability characterisation of nanoscale Si and InGaAs fin field-effect-transistors at subthreshold

  1. Indalecio, G.
  2. Seoane, N.
  3. Aldegunde, M.
  4. Kalna, K.
  5. García-Loureiro, A.J.
Journal:
Journal of Low Power Electronics

ISSN: 1546-2005,  1546-1998

Year of publication: 2015

Volume: 11

Issue: 2

Pages: 256-262

Type: Article

DOI: 10.1166/JOLPE.2015.1371 GOOGLE SCHOLAR
Data source: Scopus