Random dopant, line-edge roughness, and gate workfunction variability in a nano InGaAs finFET

  1. Seoane, N.
  2. Indalecio, G.
  3. Comesana, E.
  4. Aldegunde, M.
  5. Garcia-Loureiro, A.J.
  6. Kalna, K.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2014

Volume: 61

Issue: 2

Pages: 466-472

Type: Article

DOI: 10.1109/TED.2013.2294213 GOOGLE SCHOLAR
Data source: Scopus