3D 'atomistic' simulations of dopant induced variability in nanoscale implant free In 0.75Ga 0.25As MOSFETs

  1. Seoane, N.
  2. Aldegunde, M.
  3. García-Loureiro, A.
  4. Valin, R.
  5. Kalna, K.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2012

Volume: 69

Pages: 43-49

Type: Article

DOI: 10.1016/J.SSE.2011.11.031 GOOGLE SCHOLAR
Data source: Scopus