Investigation of resistance in n-doped Si wires using NEGF formalism

  1. Martinez, A.
  2. Brown, A.
  3. Seoane, N.
  4. Asenov, A.
Proceedings:
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

ISBN: 9781424428397

Year of publication: 2009

Pages: 416-419

Type: Conference paper

DOI: 10.1109/SCED.2009.4800522 GOOGLE SCHOLAR