Publicacións en colaboración con investigadores/as de International Iberian Nanotechnology Laboratory (14)

2024

  1. The impact of local pinning sites in magnetic tunnel junctions with non-homogeneous free layers

    Communications Materials, Vol. 5, Núm. 1

2023

  1. Antimony Selenide Solar Cells Fabricated by Hybrid Reactive Magnetron Sputtering

    Nanomaterials, Vol. 13, Núm. 15

  2. Multilayer spintronic neural networks with radiofrequency connections

    Nature Nanotechnology, Vol. 18, Núm. 11, pp. 1273-1280

  3. Radio-Frequency Spintronic Neural Networks

    2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings

  4. Van der Waals Heteroepitaxy of GaSe and InSe, Quantum Wells, and Superlattices

    Advanced Functional Materials, Vol. 33, Núm. 13

2022

  1. Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3grown by molecular beam epitaxy

    Journal of Applied Physics, Vol. 132, Núm. 11

2021

  1. Efficient rese2 photodetectors with cvd single-crystal graphene contacts

    Nanomaterials, Vol. 11, Núm. 7

  2. Novel Polymorph of GaSe

    Advanced Functional Materials, Vol. 31, Núm. 48

  3. Van der Waals Epitaxy of Ultrathin β-In2Se3on Insulators Used in Standard Silicon Microelectronics Technology

    Crystal Growth and Design, Vol. 21, Núm. 9, pp. 5268-5274

  4. Wafer-Scale Fabrication of 2D β-In2Se3 Photodetectors

    Advanced Optical Materials, Vol. 9, Núm. 1

2020

  1. Chemical instability at chalcogenide surfaces impacts chalcopyrite devices well beyond the surface

    Nature Communications, Vol. 11, Núm. 1

  2. Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors

    Sensors and Actuators, A: Physical, Vol. 315

2019

  1. Self-assembled Bismuth Selenide (Bi 2 Se 3 ) quantum dots grown by molecular beam epitaxy

    Scientific Reports, Vol. 9, Núm. 1

  2. High-detectivity infrared photodetector based on InAs submonolayer quantum dots grown on GaAs(001) with a 2 × 4 surface reconstruction

    Journal of Applied Physics, Vol. 126, Núm. 22