Arquitectura de Computadores
ARQCOMP
![Foto de Juan Miguel](/img/nophoto.png)
Juan Miguel
López González
Publicacións nas que colabora con Juan Miguel López González (16)
2005
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3D parallel simulation of InP/InGaAs HBT
2005 Spanish Conference on Electron Devices, Proceedings
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Modelling of new SiGeC HBTs
2005 Spanish Conference on Electron Devices, Proceedings
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Modelling of new SiGeCHBTs
2005 SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS
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Noise bipolar models for SiGe HBT
2005 Spanish Conference on Electron Devices, Proceedings
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Numerical simulation of new InP/GaAsSb-DHBTs using ATLAS
2005 Spanish Conference on Electron Devices, Proceedings
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Tunnel effect in DC and AC characteristics of new InGaP/GaAs HBTs
2005 Spanish Conference on Electron Devices, Proceedings
2004
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A model for abrupt double heterojunction bipolar transistors
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 17, Núm. 1, pp. 29-42
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Electron quasi-Fermi level splitting at the base-emitter junction of HBTs and DHBTs
Semiconductor Science and Technology, Vol. 19, Núm. 3, pp. 552-557
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Physics-based model for tunnel heterostructure bipolar transistors
Semiconductor Science and Technology, Vol. 19, Núm. 11, pp. 1300-1305
2003
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A parallel 3D semiconductor device simulator for gradual heterojunction bipolar transistors
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 16, Núm. 1, pp. 53-66
2001
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Three-dimensional simulation of AlxGa1-xAs/GaAs gradual heterojunction bipolar transistor
2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001
2000
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Modelling and simulation of AlxGa1-xAs/GaAs HBTs using the finite element method
Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
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Modelling and simulation of AlxGa1-xAs/GaAs HBTs using the finite element method
8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS
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Parallel finite element method to solve the 3D Poisson equation and its application to abrupt heterojunction bipolar transistors
International Journal for Numerical Methods in Engineering, Vol. 49, Núm. 5, pp. 639-652
1999
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Parallel preconditioners for solving nonsymmetric linear systems
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
1998
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Numerical analysis of abrupt heterojunction bipolar transistors
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 11, Núm. 4, pp. 221-229