Study of individual phonon scattering mechanisms and the validity of Matthiessen's rule in a gate-all-around silicon nanowire transistor

  1. Aldegunde, M.
  2. Martinez, A.
  3. Barker, J.R.
Zeitschrift:
Journal of Applied Physics

ISSN: 0021-8979

Datum der Publikation: 2013

Ausgabe: 113

Nummer: 1

Art: Artikel

DOI: 10.1063/1.4772720 GOOGLE SCHOLAR