Methodology for the simulation of the variability of MOSFETs with polycrystalline high-k dielectrics using CAFM input data

  1. Ruiz, A.
  2. Couso, C.
  3. Seoane, N.
  4. Porti, M.
  5. Garcia-Loureiro, A.
  6. Nafria, M.
Zeitschrift:
IEEE Access

ISSN: 2169-3536

Datum der Publikation: 2021

Art: Artikel

DOI: 10.1109/ACCESS.2021.3090472 GOOGLE SCHOLAR lock_openOpen Access editor
Datenquelle: Scopus