A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors

  1. Seoane, N.
  2. Martinez, A.
Revista:
Journal of Applied Physics

ISSN: 0021-8979

Ano de publicación: 2013

Volume: 114

Número: 10

Tipo: Artigo

DOI: 10.1063/1.4820390 GOOGLE SCHOLAR