Contribution to the physical modelling of single charged defects causing the random telegraph noise in junctionless FinFET
- Atamuratov, A.E.
- Khalilloev, M.M.
- Yusupov, A.
- García-Loureiro, A.J.
- Chedjou, J.C.
- Kyandoghere, K.
Zeitschrift:
Applied Sciences (Switzerland)
ISSN: 2076-3417
Datum der Publikation: 2020
Ausgabe: 10
Nummer: 15
Art: Artikel
