3D simulation study of work-function variability in a 25 nm metal-gate FinFET with curved geometry using voronoi grains

  1. Indalecio, G.
  2. Garcia-Loureiro, A.J.
  3. Aldegunde, M.
  4. Kalna, K.
Konferenzberichte:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ISBN: 9780615717562

Datum der Publikation: 2012

Seiten: 149-152

Art: Konferenz-Beitrag