3D simulations of random dopant induced threshold voltage variability in inversion-mode In0.53Ga0.47As GAA MOSFETs
- Seoane, N.
- Garcia-Loureiro, A.
- Comesaña, E.
- Valin, R.
- Indalecio, G.
- Aldegunde, M.
- Kalna, K.
Konferenzberichte:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
ISBN: 9780615717562
Datum der Publikation: 2012
Seiten: 392-395
Art: Konferenz-Beitrag